| 1. |
- Pettersson, Håkan, et al.
(författare)
-
Intersubband photoconductivity of self-assembled InAs quantum dots embedded in InP
- 2004
-
Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 95:4, s. 1829-1831
-
Tidskriftsartikel (refereegranskat)abstract
- The results from photoconductivity (PC) measurements on InAs dots embedded in InP are presented. The PC technique is recently applied to the study of InAs dots embedded in matrices of GaAs and Al0.3Ga0.7As matrix, respectively. It is demonstrated that this technique reveals important new physical insight into the electronic structure of the InAs/InP dots, information that cannot easily be obtained by other techniques.
|
|
| 2. |
- Pettersson, Håkan, et al.
(författare)
-
Optically induced charge storage and current generation in InAs quantum dots
- 2002
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 65:7, s. 0733041-0733044
-
Tidskriftsartikel (refereegranskat)abstract
- We report on optically induced charge storage effects and current generation in self-assembled InAs quantum dots embedded in an InP matrix. Illumination with photons of energy higher than about 0.86 eV efficiently loads the dots with a maximum of about 1 hole/dot. The spectral response at lower photon energy is strongly enhanced at elevated temperatures. We present a detailed balance model for the dots and discuss the thermally assisted optical excitation processes pertinent to hole accumulation. We also show that these processes make the dots act as nanometer-scaled temperature-dependent current generators.
|
|
| 3. |
- Pettersson, Håkan, et al.
(författare)
-
Photoexcitation of excitons in self-assembled quantum dots
- 2004
-
Ingår i: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 85:21, s. 5046-5048
-
Tidskriftsartikel (refereegranskat)abstract
- Using an approach of combining Fourier transform infrared spectroscopy with resonant illumination from a secondary external light source, we have measured the photocurrent (PC) for multiple layers of self-assembled InAs dots embedded in a matrix of InP. Without external illumination, we observe photoexcitation of electrons from bound states in the dots to the InP barrier. By additional illumination from the external light source, a strong broadening of the PC signal is observed. We interpret this broadening in terms of photoexcitation of electrons in the presence of additional holes in the dots created by the external light source. We extract the spectral distribution of the photoexcitation process at 6 and 77 K, respectively, and show by comparison with theoretical calculations that it is consistent with an exciton binding energy of 20 meV.
|
|
| 4. |
- Pettersson, Håkan, 1962-, et al.
(författare)
-
Case study of an InAs quantum dot memory : Optical storing and deletion of charge
- 2001
-
Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 79:1, s. 78-80
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied self-assembled InAs quantum dots embedded in an InP matrix using photocapacitance and photocurrent spectroscopy. These dots are potentially promising for memories due to the large confinement energy for holes. In this work we have realized simple quantum dot memory by placing the dots in the space–charge region of a Schottky junction. Our measurements reveal that a maximum of about one hole can be stored per dot. We also find that illumination for an extended period deletes the stored charge. We show that these limitations do not reflect the intrinsic properties of the dots, but rather the sample structure in combination with deep traps present in the sample.
|
|
